Three dimensional flash memory using electrode layers and/or interlayer insulation layers having different properties, and preparation method therefor

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United States of America Patent

PATENT NO 9922990
SERIAL NO

15115232

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Abstract

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Embodiments of the present invention enable threshold voltage distribution of a plurality of electrode layers to be improved by configuring each of the plurality of electrode layer maintains to have different physical structures or materials, etc., thereby enhancing credibility during a process of maintaining stores data and a reading process.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Song, Yun Heub Gyeonggi-do, KR 54 129

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