Method and device for reducing FinFET self-heating effect
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United States of America Patent
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Mar 20, 2018
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N/A
app pub date -
Sep 29, 2016
filing date -
Dec 22, 2015
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Abstract
A method of manufacturing a semiconductor device includes providing a semiconductor substrate, forming a diamond film on the substrate, etching the diamond film to form a first trench that extends to the substrate, epitaxially growing a first semiconductor material in the first trench to form a first semiconductor fin structure, and removing an upper portion of the diamond film to expose an upper portion of the first semiconductor fin structure.
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