INTEGRATED CIRCUITS HAVING TRANSISTORS WITH HIGH HOLDING VOLTAGE AND METHODS OF PRODUCING THE SAME
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United States of America Patent
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Sep 21, 2016
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Sep 21, 2016
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Abstract
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate and a source in electrical communication with the substrate. A drain is also in electrical communication with the substrate. A gate overlies the substrate between the source and the drain, wherein a channel is defined within the substrate directly underlying the gate, and where a Schottky portion of the substrate is positioned between the channel and the source.
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