Process for producing a contact on an active zone of an integrated circuit, for example produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit
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United States of America Patent
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Mar 20, 2018
Issued Date -
N/A
app pub date -
Jan 9, 2017
filing date -
Jun 18, 2015
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Abstract
An integrated circuit includes an active zone lying above a semiconductor substrate. A cavity borders the active zone and extends, in an insulating zone, as far as into the vicinity of a semiconductor region. An insulating multilayer is provided and an electrically conductive contact extends within the insulating multilayer to emerge onto the active zone and into the cavity. The insulating multilayer includes a first insulating layer covering the active zone outside the contact and lining the walls of the cavity. An additional insulating layer covers the portion of the first insulating layer lining the walls of the cavity. The contact reaches the additional insulating layer in the cavity. An insulating region lies on top of the first insulating layer and the additional insulating layer made from insulating material around the contact.
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