CVD reactor and method for nanometric delta doping of diamond
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United States of America Patent
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Mar 20, 2018
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Sep 7, 2016
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Sep 7, 2016
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Abstract
An apparatus and method for creating nanometric delta doped layers in epitaxial diamond includes providing a dummy gas load with gas impedance equivalent to the reactor, and switching gas supplied between the reactor and the gas dummy load without stopping either flow, thereby enabling rapid flow and rapid gas switching without turbulence. An atomically smooth, undamaged substrate can be prepared, preferably in the (100) plane, by etching the surface after polishing to remove subsurface damage. A gas phase chemical getter reactant such as hydrogen disulfide can be used to suppress incorporation of residual boron into the intrinsic layers. Embodiments can produce interfaces between doped and mobile layers that provide at least 100 cm2/Vsec carrier mobility and 1013 cm−2 sheet carrier concentration.
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