Deposition of boron and carbon containing materials
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 20, 2018
Issued Date -
N/A
app pub date -
Jan 6, 2017
filing date -
Oct 16, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Loading Importance Indicators... 
Abstract
Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.
First Claim
Other Claims data not available
Family
Loading Family data...
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
- 5 Citation Count
- C23C Class
- 32.86 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Sep 20, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Sep 20, 2029 |
