Plasma processing device

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United States of America Patent

PATENT NO 9922803
SERIAL NO

13653642

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Abstract

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The invention provides a plasma processing device, wherein the upper electrode and the lower electrode are in the vacuum chamber. The chip is placed in the lower electrode. The first plate is placed between the upper electrode and the lower electrode, and the first plate includes a plurality of first voids. The second plate is placed between the first plate and the lower electrode, and the second plate includes a plurality of second voids. The high frequency power is provided by the upper electrode and the lower electrode in the vacuum chamber, and the plasma is generated between the third plate and the upper electrode. The plasma is filtered by the third void, the first void, and the second void.

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Patent Owner(s)

Patent OwnerAddress
CHANG GUNG UNIVERSITYNO 259 WENHUA 1ST RD GUISHAN DIST TAOYUAN CITY 33302

International Classification(s)

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  • 2012 Application Filing Year
  • H01J Class
  • 2054 Applications Filed
  • 1685 Patents Issued To-Date
  • 82.04 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20122013201420152016201720182019202020210255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chan, Chu-Fa New Taipei, TW 1 6
Chou, Chien Kwei-Shan Tao-Yuan, TW 14 162
Huang, Chi-Hsien Kwei-Shan Tao-Yuan, TW 9 28
Lai, Chao-Sung Kwei-Shan Tao-Yuan, TW 29 345

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Patent Citation Ranking

  • 3 Citation Count
  • H01J Class
  • 31.16 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges79715421524116522101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 70100 +010020030040050060070080090010001100120013001400150016001700

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