Silicon carbide powder, method for manufacturing the same and method for growing single crystal
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United States of America Patent
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Mar 20, 2018
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Dec 14, 2012
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Dec 26, 2011
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Abstract
A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.
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