TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Mar 13, 2018
Grant Date -
Mar 15, 2018
app pub date -
Apr 5, 2017
filing date -
Sep 13, 2016
priority date (Note) -
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Abstract
A method of forming a transistor includes: forming a stack structure including a first conductive layer, a first insulating layer, a second conductive layer, and a second insulating layer on a substrate; patterning the first insulating layer, the second conductive layer, and the second insulating layer to form at least one opening passing through the first insulating layer, the second conductive layer, and the second insulating layer; forming a semiconductor layer over the second insulating layer and filling the opening; removing the portion of the semiconductor layer over the second insulating layer, in which the portion of the semiconductor layer filled in the opening constitutes at least one semiconductor channel; and forming a third conductive layer over the semiconductor channel.
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