Resonant body high electron mobility transistor
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United States of America Patent
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Mar 13, 2018
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Jun 17, 2015
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Jun 17, 2014
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Abstract
A resonant body high electron mobility transistor is described with resonance frequencies in gigahertz regime, limited by the cutoff frequency of the readout transistor. Piezoelectric materials form the resonating membrane of the device. Different modes of acoustic resonance, such as a thickness-mode, can be excited and amplified by applying an AC signal to the transducer electrode and proper biasing of all electrodes. The drain electrode reads out the acoustic resonance and amplifies it. The drain electrode is placed at or near where the piezoelectric charge pickup is maximum; whereas, the source electrode is placed at a nodal point with minimum displacement.
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