Oxide semiconductor thin film, thin film transistor, manufacturing method and device
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United States of America Patent
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Mar 13, 2018
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N/A
app pub date -
Sep 2, 2015
filing date -
Apr 30, 2015
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Abstract
This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.
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