Trenched and implanted bipolar junction transistor
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United States of America Patent
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Mar 13, 2018
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app pub date -
Feb 10, 2015
filing date -
Feb 10, 2014
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Abstract
The present invention concerns a monolithically merged trenched-and-implanted Bipolar Junction Transistor (TI-BJT) with antiparallel diode and a method of manufacturing the same. Trenches are made in a collector, base, emitter stack downto the collector. The base electrode is formed on an implanted base contact region at the bottom surface of the trench. The present invention also provides for products produced by the methods of the present invention and for apparatuses used to perform the methods of the present invention.
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