Memory first process flow and device
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United States of America Patent
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Mar 13, 2018
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N/A
app pub date -
Jun 13, 2016
filing date -
Dec 14, 2012
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Abstract
A semiconductor device includes a substrate comprising a source region and a drain region, a bit storing element formed on the substrate, a memory gate structure, a first insulating layer formed on the substrate, a second insulating layer formed on the substrate, and a select gate structure formed on the first insulating layer. The second insulating layer is formed on the memory gate structure and the select gate structure and between the memory gate structure and the select gate structure.
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