Semiconductor device comprising planar gate and trench field electrode structure
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United States of America Patent
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Mar 13, 2018
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app pub date -
Mar 30, 2015
filing date -
Mar 30, 2015
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Abstract
An embodiment of a semiconductor device includes a transistor cell array having transistor cells in a semiconductor body. A planar gate structure is on the semiconductor body at a first side. Field electrode trenches extend into the semiconductor body from the first side. Each of the field electrode trenches includes a field electrode structure. A depth d of the field electrode trenches is greater than a maximum lateral dimension wmax of the field electrode trenches at the first side.
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