Semiconductor package device and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 13, 2018
Issued Date -
N/A
app pub date -
Apr 4, 2017
filing date -
Jan 12, 2016
priority date (Note) -
In Force
status (Latency Note)
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Importance

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Abstract
In one or more embodiments, a semiconductor package includes a redistribution layer, a conductive pad, a dielectric layer, a silicon layer, and a conductive contact. The redistribution layer includes a first surface and a second surface opposite to the first surface. The conductive pad is on the first surface of the redistribution layer. The dielectric layer is disposed on the first surface of the redistribution layer to cover a first portion of the conductive pad and to expose a second portion of the conductive pad. The silicon layer is disposed on the dielectric layer, the silicon layer having a recess to expose the second portion of the conductive pad. The conductive contact is disposed over the silicon layer and extends into the recess of the silicon layer.
First Claim
all claims..Other Claims data not available
Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
ADVANCED SEMICONDUCTOR ENGINEERING INC | KAOHSIUNG |
International Classification(s)

- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chang, Chien Chien Lin | Kaohsiung, TW | 8 | 45 |
# of filed Patents : 8 Total Citations : 45 | |||
Hung, Chih-Pin | Kaohsiung, TW | 71 | 813 |
# of filed Patents : 71 Total Citations : 813 | |||
Kao, Chin-Li | Kaohsiung, TW | 30 | 136 |
# of filed Patents : 30 Total Citations : 136 | |||
Lee, Chang Chi | Kaohsiung, TW | 44 | 184 |
# of filed Patents : 44 Total Citations : 184 |
Cited Art Landscape
- No Cited Art to Display

Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
Forward Cite Landscape
- No Forward Cites to Display

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