Integrated circuits with aluminum via structures and methods for fabricating the same
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United States of America Patent
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Mar 13, 2018
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app pub date -
Dec 30, 2015
filing date -
Dec 30, 2015
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Abstract
A method for fabricating an integrated circuit includes forming a first opening in an upper dielectric layer, the first opening having a first width, forming a second opening in a lower dielectric layer, the lower dielectric layer being below the upper dielectric layer, the second opening having a second width that is narrower than the first width, the second opening being substantially centered underneath the first opening so as to form a stepped via structure, conformally depositing an aluminum material layer in the stepped via structure and over the upper dielectric layer, and forming a passivation layer over the aluminum material layer.
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