Methods for manufacturing a semiconductor device
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United States of America Patent
Stats
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Mar 13, 2018
Issued Date -
N/A
app pub date -
Dec 16, 2016
filing date -
Apr 25, 2016
priority date (Note) -
In Force
status (Latency Note)
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Abstract
Methods for manufacturing a semiconductor device include forming a gate line extending in a first direction in a substrate, and an impurity region on a side surface of the gate line, forming an insulating film pattern on the substrate, the insulating film pattern extending in the first direction and comprising a first through-hole that is configured to expose the impurity region, forming a barrier metal layer on the first through-hole, forming a conductive line contact that fills the first through-hole and that is electrically connected to the impurity region, forming a first mask pattern on the conductive line contact and the insulating film pattern, the first mask pattern extending in a second direction that is different from the first direction and the first mask pattern comprising a first opening, and removing corners of the barrier metal layer by partially etching the barrier metal layer.
First Claim
Other Claims data not available
Family
| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| KR | B1 | KR102406726 | Apr 25, 2016 |
| CN | B | CN107305837 | Mar 15, 2017 |
| US | B2 | US10283360 | Feb 01, 2018 |
International Classification(s)
- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Sep 13, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Sep 13, 2029 |
