Apparatuses, systems, and methods for ion traps
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United States of America Patent
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Mar 13, 2018
Issued Date -
N/A
app pub date -
Oct 25, 2016
filing date -
Apr 30, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
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International Classification(s)
- H01J:ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- G06N:COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL M....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- B82Y:SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; ....
- G21K:TECHNIQUES FOR HANDLING PARTICLES OR ELECTROMAGNET....
- B01D:SEPARATION
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