Method for detecting a thinning of the semiconductor substrate of an integrated circuit from its back face and corresponding integrated circuit
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United States of America Patent
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Mar 13, 2018
Issued Date -
N/A
app pub date -
Jul 25, 2016
filing date -
Feb 22, 2016
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Abstract
The thinning of a semiconductor substrate of an integrated circuit from a back face is detected using the measurement of a physical quantity representative of the resistance between the ends of two electrically-conducting contacts situated at an interface between an insulating region and an underlying substrate region. The two electrically-conducting contacts extend through the insulating region to reach the underlying substrate region.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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STMICROELECTRONICS (ROUSSET) SAS | 13790 ROUSSET |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Fornara, Pascal | Pourrieres, FR | 115 | 341 |
# of filed Patents : 115 Total Citations : 341 | |||
Rivero, Christian | Rousset, FR | 83 | 289 |
# of filed Patents : 83 Total Citations : 289 |
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