Semiconductor device drive method
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United States of America Patent
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Mar 13, 2018
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app pub date -
Sep 4, 2015
filing date -
Apr 5, 2013
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Abstract
A semiconductor device drive method achieves a balance between a lifetime and a detection sensitivity which are required for a temperature detection diode formed via an insulating film on a substrate on which an active element is formed. The semiconductor device drive method includes energizing the temperature detection diode with a constant current, the constant current having a current density value between an upper limit defined based on the lifetime of the temperature detection diode, and a lower defined based on a variation allowable voltage of an output voltage of the temperature detection diode with respect to a standard deviation.
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