Focused radiation beam induced deposition
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United States of America Patent
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Mar 13, 2018
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app pub date -
Nov 16, 2015
filing date -
Nov 16, 2015
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Abstract
A semiconductor device fabrication method includes irradiating a first surface of a substrate with a radiation beam. While irradiating the first surface of the substrate, a precursor gas is introduced near the first surface to deposit a layer including a first material. The precursor gas is removed from near the first surface after the depositing the layer. After the removing the precursor gas and prior to forming another layer over the layer, while irradiating a second surface of the layer, a cleaning gas is introduced near the second surface of the layer to transform the first material into a second material.
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