Low resistivity single crystal silicon carbide wafer
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United States of America Patent
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Mar 13, 2018
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Dec 1, 2009
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May 23, 2007
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Abstract
The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.
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