-based single crystal substrate and method for producing same
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United States of America Patent
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Mar 13, 2018
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app pub date -
May 2, 2014
filing date -
May 14, 2013
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Abstract
Provided is one embodiment which is a method for growing a β-Ga2O3-based single crystal which uses the EFG method and includes raising a Ga2O3 melt inside a crucible up to a die opening via a die slit such that a seed crystal is contacted with the Ga2O3-based melt in the opening of the die with a horizontal position of the seed crystal shifted in a width direction (W) from a center in the width direction (W) of the die, and pulling up the seed crystal contacting the Ga2O3-based melt so as to grown a β-Ga2O3 single crystal.
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