Method for growing beta-Ga2O3-based single crystal, and beta-Ga2O3-based single crystal substrate and method for producing same

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United States of America Patent

PATENT NO 9915009
SERIAL NO

14890723

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Abstract

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Provided is one embodiment which is a method for growing a β-Ga2O3-based single crystal including contacting a flat plate-shaped seed crystal with a Ga2O3-based melt, and pulling up the seed crystal such that a flat plate-shaped β-Ga2O3-based single crystal having a principal surface which intersects a surface is grown without inheriting a crystal information of a vaporized material of the Ga2O3-based melt adhered to the principal surface of the seed crystal, wherein when growing the β-Ga2O3-based single crystal, a shoulder of the β-Ga2O3-based single crystal is widened in a thickness direction (t) thereof.

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Patent Owner(s)

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TAMURA CORPORATION1-19-43 HIGASHI-OIZUMI NERIMA-KU TOKYO 1788511

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koshi, Kimiyoshi Tokyo, JP 13 22
Watanabe, Shinya Tokyo, JP 282 1738

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