Fin-based nonvolatile memory structures, integrated circuits with such structures, and methods for fabricating same
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United States of America Patent
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Mar 6, 2018
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N/A
app pub date -
Jul 1, 2016
filing date -
Jul 1, 2016
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Abstract
Integrated circuits, nonvolatile memory (NVM) structures, and methods for fabricating integrated circuits with NVM structures are provided. An exemplary integrated circuit includes a substrate and a dual-bit NVM structure overlying the substrate. The dual-bit NVM structure includes primary, first adjacent and second adjacent fin structures laterally extending in parallel over the substrate. The primary fin structure includes source, channel and drain regions. Each adjacent fin structure includes a program/erase gate. The dual-bit NVM structure further includes a first floating gate located between the channel region of the primary fin structure and the first adjacent fin structure and a second floating gate located between the channel region of the primary fin structure and the second adjacent fin structure. Also, the dual-bit NVM structure includes a control gate adjacent the primary fin structure.
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