Method to improve gate dielectric quality for FinFET
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United States of America Patent
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Mar 6, 2018
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N/A
app pub date -
Aug 12, 2016
filing date -
Jan 13, 2016
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Abstract
A method for manufacturing a semiconductor device includes providing a substrate structure comprising a substrate, a plurality of fins on the substrate and a hardmask on the fins, forming an insulating layer on the substrate structure covering the fins and the hardmask, removing a portion of the insulating layer by etching to expose the hardmask, removing the hardmask, and performing a fluorine ion implantation into a top portion of the fins. The implanted fluorine ions passivate dangling bonds in the top portion of the fins, thereby improving the reliability of the semiconductor device.
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