Method for manufacturing silicon carbide semiconductor device, method for manufacturing semiconductor base, silicon carbide semiconductor device, and device for manufacturing silicon carbide semiconductor device
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United States of America Patent
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Mar 6, 2018
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app pub date -
Dec 11, 2015
filing date -
Dec 11, 2015
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Abstract
A method for manufacturing a silicon carbide semiconductor device comprises: a step for forming a front-surface electrode (30) on a front surface side of a silicon carbide wafer (10); a step for thinning the silicon carbide wafer (10) by reducing a thickness of the silicon carbide wafer (10) from a back surface side thereof; a step for providing a metal layer (21) on the back surface of the thinned silicon carbide wafer (10); a step for irradiating the metal layer (21) with laser light, while applying an external force such that the silicon carbide wafer and the metal layer are planarized, to form the carbide layer (20) obtained by a reaction with carbon in the silicon carbide wafer (10), on a back surface side of the metal layer (21); and a step for forming a back-surface electrode (40) on a back surface side of the carbide layer (20).
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