Low temperature poly-silicon thin film transistor, fabricating method thereof, array substrate and display device
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United States of America Patent
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Mar 6, 2018
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app pub date -
Mar 30, 2016
filing date -
May 5, 2015
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Abstract
Embodiments of the present invention disclose a low temperature poly-silicon thin film transistor and a method of fabricating the same, an array substrate, and a display device. The low temperature poly-silicon thin film transistor comprises an active layer, a source and a drain, wherein the active layer comprises a source contact region, a drain contact region, and a channel region located between the source contact region and the drain contact region, the source is provided above and connected to the source contact region, the drain being provided above and connected to the drain contact region, and thicknesses of the source contact region and the drain contact region are both larger than that of the channel region.
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