Pattern decomposition for directed self assembly patterns templated by sidewall image transfer

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United States of America Patent

PATENT NO 9911603
SERIAL NO

15397092

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Abstract

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After forming spacers over a hard mask layer using a sidewall image transfer process, a neutral material layer is formed on the portions of the hard mask layer that are not covered by the spacers. The spacers and the neutral material layer guide the self-assembly of a block copolymer material. The microphase separation of the block copolymer material provides a lamella structure of alternating domains of the block copolymer material.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Joy San Jose, US 86 1534
Guillorn, Michael A Cold Springs, US 268 5507
Liu, Chi-Chun Altamont, US 109 616
Tsai, Hsinyu White Plains, US 68 745

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