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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
INFINEON TECHNOLOGIES AMERICAS CORP	101 N SEPULVEDA BLVD EL SEGUNDO CA 90245

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
• C30B:SINGLE-CRYSTAL GROWTH

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Beach, Robert	La Crescenta, US	153	6781
Bridger, Paul	Altadena, US	28	266

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
7.5 Year Payment	$3600.00	$1800.00	$900.00	Sep 6, 2025
11.5 Year Payment	$7400.00	$3700.00	$1850.00	Sep 6, 2029

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 7.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
March 06, 2018	US,9911600,B2   US9911600B2	GRANTED PATENT AS SECOND PUBLICATION
January 28, 2016	US,20160027643,A1   US20160027643A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 9911600

Fabrication of semiconductor device using alternating high and low temperature layers

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