Methods of forming dielectric films, new precursors and their use in semiconductor manufacturing

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United States of America Patent

PATENT NO 9911590
SERIAL NO

15407913

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Abstract

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Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.

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Patent Owner(s)

Patent OwnerAddress
L'AIR LIQUIDE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE75 QUAI D'ORSAY PARIS 75007

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Blasco, Nicolas Echirolles, FR 43 1053
Dussarrat, Christian Tokyo, JP 139 7373
Lachaud, Christophe Paris, FR 9 639
Pinchart, Audrey Paris, FR 10 897

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