Substrate processing apparatus, method of manufacturing semiconductor device, and baffle structure of the substrate processing apparatus
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 6, 2018
Issued Date -
N/A
app pub date -
Nov 29, 2011
filing date -
Nov 30, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully