Selection circuit with autobooting for magnetic memory and methods therefor
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United States of America Patent
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Mar 6, 2018
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app pub date -
Feb 28, 2017
filing date -
Feb 28, 2017
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Abstract
A selection circuit and related access circuitry that can be used for column selection in spin-torque magnetic memory is disclosed. The selection circuit can be implemented with three transistors, all of which can be NMOS transistors, thereby reducing area requirements. The selection circuit includes drive transistor that can be autobooted based on the drive voltage applied across the drive transistor. A single control signal controls the state of the selection circuit, and the selection circuits can be nested to provide multiple levels of decoding or selection.
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