Seed selection and growth methods for reduced-crack group III nitride bulk crystals
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United States of America Patent
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Mar 6, 2018
Issued Date -
N/A
app pub date -
Jan 22, 2016
filing date -
Apr 7, 2006
priority date (Note) -
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Abstract
In one instance, the invention provides a method of growing bulk crystal of group III nitride using a seed crystal selected by (a) measuring x-ray rocking curves of a seed crystal at more than one point, (b) quantifying the peak widths of the measured x-ray rocking curves, and (c) evaluating the distribution of the quantified peak widths. The invention also includes the method of selecting a seed crystal for growing bulk crystal of group III nitride.
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Patent Citation Ranking
- 4 Citation Count
- G01N Class
- 40.30 % this patent is cited more than
- 7 Age
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