Method for depositing dielectric film in trenches by PEALD
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United States of America Patent
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Mar 6, 2018
Issued Date -
N/A
app pub date -
Oct 15, 2015
filing date -
Oct 15, 2015
priority date (Note) -
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Abstract
A method for depositing a dielectric film in a trench by plasma-enhanced atomic layer deposition (PEALD) includes depositing a dielectric film in a trench of a substrate by PEALD under conditions wherein the wet etch rate of the depositing film on a top surface of the substrate is substantially equivalent to or higher than the wet etch rate of the depositing film at a sidewall of the trench, wherein a precursor fed into the reaction space has —N(CH3)2 as a functional group.
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Patent Citation Ranking
- 411 Citation Count
- C23C Class
- 99.94 % this patent is cited more than
- 7 Age
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