Method for achieving good adhesion between dielectric and organic material

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United States of America Patent

PATENT NO 9908774
APP PUB NO 20160221823A1
SERIAL NO

15024942

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Abstract

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The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

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Patent Owner(s)

Patent OwnerAddress
CAVENDISH KINETICS INC2960 NORTH 1ST STREET SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Renault, Mickael San Jose, US 22 199

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