Substrate structure and fabrication method thereof

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United States of America Patent

PATENT NO 9907161
SERIAL NO

14833101

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Abstract

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A method for fabricating a substrate structure is provided, which includes the steps of: disposing at least a strengthening member on a carrier; sequentially forming a first circuit layer and a dielectric layer on the carrier, wherein the strengthening member is embedded in the dielectric layer; forming a second circuit layer on the dielectric layer; removing the carrier; and forming an insulating layer on the first circuit layer and the second circuit layer. The strengthening member facilitates to reduce thermal warping of the substrate structure.

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Patent Owner(s)

Patent OwnerAddress
SILICONWARE PRECISION INDUSTRIES CO LTDNO 123 SEC 3 DA FONG ROAD TANTZU TAICHUNG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chun-Lung Taichung, TW 129 867
You, Jin-Wei Taichung, TW 5 6

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges45012521444514421101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7081 - 90010020030040050060070080090010001100120013001400

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