Semiconductor device, manufacturing method of the same, and mobile phone
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United States of America Patent
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Feb 27, 2018
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N/A
app pub date -
Feb 11, 2016
filing date -
Apr 1, 2011
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Abstract
A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1S including an area AR1 on which an LDMOSFET is formed and an area AR2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1S.
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