Semiconductor device and method for producing a semiconductor device
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United States of America Patent
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Feb 27, 2018
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Apr 17, 2017
filing date -
Sep 26, 2013
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Abstract
A semiconductor device includes first pillar-shaped silicon layers, a first gate insulating film formed around the first pillar-shaped silicon layers, gate electrodes formed of metal and formed around the first gate insulating film, gate lines formed of metal and connected to the gate electrodes, a second gate insulating film formed around upper portions of the first pillar-shaped silicon layers, first contacts formed of a first metal material and formed around the second gate insulating film, second contacts formed of a second metal material and connecting upper portions of the first contacts and upper portions of the first pillar-shaped silicon layers, diffusion layers formed in lower portions of the first pillar-shaped silicon layers, and variable-resistance memory elements formed on the second contacts.
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