Semiconductor power device
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United States of America Patent
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Feb 27, 2018
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N/A
app pub date -
Oct 28, 2016
filing date -
Oct 28, 2015
priority date (Note) -
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Abstract
A semiconductor power device includes a substrate, an active region having a recess and disposed on the substrate, a first conductivity type semiconductor layer disposed on the recess and devoid of overlapping with the recess, a gate electrode disposed on the active region wherein a portion of the gate electrode is disposed in the recess, a dielectric layer between the active region and the gate electrode, and a two dimension electron gas formed in the active region.
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