Bidirectional MOS device and method for preparing the same

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United States of America Patent

PATENT NO 9905682
SERIAL NO

15372352

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Abstract

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A bidirectional Metal-Oxide-Semiconductor (MOS) device, including a P-type substrate, and an active region. The active region includes a drift region, a first MOS structure and a second MOS structure; the first MOS structure includes a first P-type body region, a first P+ contact region, a first N+ source region, a first metal electrode, and a first gate structure; the second MOS structure includes a second P-type body region, a second P+ contact region, a second N+ source region, a second metal electrode, and a second gate structure; and the drift region includes a dielectric slot, a first N-type layer, a second N-type layer, and an N-type region. The active region is disposed on the upper surface of the P-type substrate. The first MOS structure and the second MOS structure are symmetrically disposed on two ends of the upper layer of the drift region.

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Patent Owner(s)

Patent OwnerAddress
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA611731 NO 2006 WEST AVENUE CHENGDU HI TECH ZONE (WEST DISTRICT SICHUAN) CHENGDU CITY SICHUAN PROVINCE 611731
INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN UESTC523808 NO TWO NO 17 SONGSHAN LAKE SCIENCE AND TECHNOLOGY INDUSTRIAL PARK GUANGDONG DONGGUAN DONGGUAN CITY GUANGDONG PROVINCE 523808

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Zehong Chengdu, CN 13 12
Li, Zhaoji Chengdu, CN 8 18
Liu, Jingxiu Chengdu, CN 11 187
Ren, Min Chengdu, CN 72 267
Zhang, Bo Chengdu, CN 1006 7322
Zhang, Jinping Chengdu, CN 39 222

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