Power semiconductor device and method of fabricating the same
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United States of America Patent
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Feb 27, 2018
Grant Date -
Dec 21, 2017
app pub date -
Jun 20, 2017
filing date -
Jun 21, 2016
priority date (Note) -
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Abstract
Provided is a power semiconductor device comprising a pair of gate electrodes respectively disposed in a first trench and a second trench spaced apart from each other in a substrate; a body region having a first conductivity type disposed between the first trench and the second trench; a pair of floating regions having a first conductivity type spaced apart from each other and surrounding a bottom surface and at least one side surface of the first trench and the second trench, respectively; and a drift region having a second conductivity type which extends from below the pair of floating regions through a region between the pair of floating regions to the body region, wherein, in the drift region, the doping concentration of a second conductivity type between the pair of floating regions is higher than the doping concentration of a second conductivity type below the pair of floating regions.
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