Gate and field electrode trench formation process
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United States of America Patent
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Feb 27, 2018
Issued Date -
N/A
app pub date -
Dec 22, 2016
filing date -
Dec 22, 2016
priority date (Note) -
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Abstract
An upper portion of a field electrode trench and a gate trench are simultaneously formed in the main surface of a substrate to approximately the same depth. A first protective layer is formed that completely fills the gate trench and lines the upper field electrode trench. The first protective layer is removed from the bottom of the upper trench and semiconductor material is removed thereby forming a lower portion of the field electrode trench while the gate trench remains completely filled by the first protective layer. An electrically conductive field electrode and a field electrode dielectric are formed in the field electrode trench. At least some of the first protective layer is removed from the gate trench. A conformal gate dielectric layer is formed on the substrate. An electrically conductive gate electrode is formed in the gate trench while the field electrode remains covered by the gate dielectric layer.
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