Method of evaluating metal contamination in boron-doped P-type silicon wafer, device of evaluating metal contamination in boron-doped P-type silicon wafer, and method of manufacturing boron-doped P-type silicon wafer
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United States of America Patent
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Feb 27, 2018
Grant Date -
Mar 17, 2016
app pub date -
Aug 27, 2015
filing date -
Sep 11, 2014
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Abstract
An aspect of the present invention relates to a method of evaluating metal contamination in a boron-doped p-type silicon wafer, which comprises measuring over time by a microwave photoconductive decay method a recombination lifetime following irradiation with light of a silicon wafer being evaluated and obtaining information on change over time of the recombination lifetime, and comparing the information on change over time of the recombination lifetime that has been obtained with reference information on change over time that has been obtained by calculation or actual measurement of a recombination lifetime of an Fe-contaminated boron-doped p-type silicon wafer to determine whether or not metal contamination other than Fe is present in the silicon wafer being evaluated.
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