Methods of forming silicon germanium tin films and structures and devices including the films
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United States of America Patent
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Feb 27, 2018
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Dec 1, 2015
filing date -
Dec 1, 2015
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Abstract
Methods of forming silicon germanium tin (SixGe1-xSny) films are disclosed. Exemplary methods include growing films including silicon, germanium and tin in an epitaxial chemical vapor deposition reactor. Exemplary methods are suitable for high volume manufacturing. Also disclosed are structures and devices including silicon germanium tin films.
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