FET type gas-sensitive device having horizontal floating gate

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United States of America Patent

PATENT NO 9903834
SERIAL NO

14073091

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Abstract

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A FET type gas-sensitive device has a floating electrode formed in a horizontal direction. The device achieves noise reduction, process simplification, pollution control, sensing speed improvement, various sensing material applicability and mechanical stability etc. in comparison with a gas-sensitive device that is vertically stacked with a floating electrode, a sensing material layer and a control electrode. The device can be assembled easily with a plurality of gas-sensitive devices being operated by various sensing mechanisms in one substrate.

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Patent Owner(s)

Patent OwnerAddress
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION1 GWANAK-RO GWANAK-GU SEOUL 08826

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Chang-Hee Daegu, KR 7 21
Lee, Jong-Ho Seoul, KR 220 3742

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