Production method of SiC crystal
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United States of America Patent
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Feb 27, 2018
Grant Date -
Dec 22, 2016
app pub date -
Jun 17, 2016
filing date -
Jun 22, 2015
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Abstract
A method for producing an SiC crystal, comprising supplying a raw material gas containing Si, C and N to vapor-grow an N-doped SiC crystal on an SiC substrate, wherein the SiC substrate is an SiC substrate on which La, Ce or Ti is deposited in part or whole of the surface or an SiC substrate in which La, Ce or Ti ion is implanted into part or whole of the surface.
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