Method for growing B-Ga2O3-based single crystal
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United States of America Patent
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Feb 27, 2018
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Oct 29, 2015
app pub date -
Oct 9, 2013
filing date -
Nov 7, 2012
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Abstract
A method for growing a β-Ga2O3-based single crystal, can provide a plate-shaped β-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a β-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a β-Ga2O3-based single crystal having a defect density of not more than 5×105 /cm2 in the whole region; and pulling up the seed crystal to grow a β-Ga2O3-based single crystal.
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