Silicon single crystal producing method
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United States of America Patent
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Feb 27, 2018
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N/A
app pub date -
Oct 31, 2014
filing date -
Nov 5, 2013
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Abstract
There is provided a silicon single crystal producing method in producing a silicon single crystal by the Czochralski method using a pulling apparatus including a heat shield, wherein an oxygen concentration in the crystal is controlled through the adjustment of a flow velocity of inert gas introduced into the apparatus at the gap portion between an exterior surface of the single crystal and a lower-end opening edge of the heat shield, in accordance with a gap-to-crystal-diameter ratio (“the area of the gap portion”/“the area of a cross-sectional of the single crystal”). By this producing method, it is possible to appropriately control the oxygen concentration in the pulled single crystal.
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