Film formation method and film formation apparatus
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United States of America Patent
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Feb 27, 2018
Issued Date -
N/A
app pub date -
Dec 18, 2012
filing date -
Dec 18, 2012
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Abstract
A film formation method is one for forming an organic layer comprising a fluorine-containing resin on an inorganic layer (3) formed on a substrate and comprising an inorganic substance. In the method, for the formation of the inorganic layer, a reactive sputtering procedure using water vapor as a reactive gas is carried out to form the inorganic layer on the substrate. Subsequently, the organic layer is formed on the inorganic layer. A film formation device enables the implementation of the film formation method.

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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
ULVAC INC | KANAGAWA JAPAN KANAGAWA |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Ikeda, Susumu | Chigasaki, JP | 34 | 391 |
Kubo, Masashi | Chigasaki, JP | 11 | 364 |
Matsumoto, Masahiro | Tomisato, JP | 228 | 2224 |
Tani, Noriaki | Tomisato, JP | 34 | 246 |
Yoshida, Takashi | Tomisato, JP | 455 | 5434 |
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